MOCVD and MBE Thin Film Deposition Components

The Epitaxial Semiconductor processes, MOCVD (Metal Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy), are thin film deposition operations which determine the brightness and frequency of a semiconductor device and develop thin film deposition components.

The MOCVD thin film deposition process is driving the development of improved LEDs (light-emitting diodes) that may alter how we use lighting in the future. LED solid state techniques may be an alternative to conventional lighting resulting from improved power efficiency. This process requires TZM Molybdenum and Pure Tungsten because of their strength and dimensional stability at elevated temperatures.

The MBE thin film deposition process is related to improved semiconductor quality, creating thin film deposition components. Because of the high energy required and the purity necessary MBE and MOCVD thin film deposition processes require Tantalum and Niobium Parts as well as Molybdenum and Tungsten materials at various stages.

Contact us to find out how our precision refractory metal machining expertise can help you with your thin film deposition components as well as other products, such as PVD sputtering targets and computer tomography (CT) scanning components.

Products include MOCVD Thin Film Deposition Components and MBE Thin Film Deposition Components.